Electronics | Free Full-Text | Gate-Voltage-Modulated Spin Precession in Graphene/WS2 Field-Effect Transistors
Contact resistance reduction of WS2 FETs using high-pressure hydrogen annealing
a) Transfer characteristics (Ids − Vgs) of the pristine monolayer WS2... | Download Scientific Diagram
High-performance few-layer WSe2 field effect transistor devices with carrier type control are demonstrated via thickness modulat
Tailoring the electrical and photo-electrical properties of a WS2 field effect transistor by selective n-type chemical doping - RSC Advances (RSC Publishing)
Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment | ACS Nano
Fabrication and electrical properties of large-area flexible monolayer... | Download Scientific Diagram
High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide Xue Liu , Jin Hu , Chunlei Yue , Della Fera, Nic
Nanomaterials | Free Full-Text | Device and Circuit Analysis of Double Gate Field Effect Transistor with Mono-Layer WS2-Channel at Sub-2 nm Technology Node
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
A mixed-dimensional WS2/GaSb heterojunction for high-performance p–n diodes and junction field-effect transistors - Journal of Materials Chemistry C (RSC Publishing)
![PDF] Deep-ultraviolet-light-driven reversible doping of WS2 field-effect transistors. | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/1fa103387db1cf8575b9aa063502a8247e9bcdce/15-Figure1-1.png "PDF] Deep-ultraviolet-light-driven reversible doping of WS2 field-effect transistors. | Semantic Scholar")
PDF] Deep-ultraviolet-light-driven reversible doping of WS2 field-effect transistors. | Semantic Scholar
Photoresponsivity of ultrathin 2D WS2/graphene heterostructures - ScienceDirect
Contact resistance reduction of WS2 FETs using high-pressure hydrogen annealing
Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors | Nano Letters
Enhanced Performance of WS2 Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts - Phan - 2022 - Small - Wiley Online Library
WS2의 소자 적용 최신 연구 동향 - 1
Low-voltage and high-gain WSe2 avalanche phototransistor with an out-of-plane WSe2/WS2 heterojunction | SpringerLink
![PDF] Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/834fd20ded4ca80e57c383e25a2613ecfe772c49/22-Figure4-1.png "PDF] Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals | Semantic Scholar")
PDF] Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals | Semantic Scholar
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films | Scientific Reports
Figure 1 from Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance. | Semantic Scholar
Benchmarking monolayer MoS2 and WS2 field-effect transistors | Nature Communications
Electrical characteristics of back-gated WS2 FET (A) Ids-Vds (inset:... | Download Scientific Diagram
